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Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
40
V
? BV DS S
? T J
I DSS
I GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, referenced to 25°C
V DS = 32V, V GS = 0V
V GS = ±20V, V GS = 0V
35
1
±100
m V/°C
μ A
nA
On Characteristics (Note 2)
V GS(th)
? V GS(th )
? T J
r DS(on)
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25°C
V GS = 10V, I D = 14A
V GS = 4.5V, I D = 11A
1.0
1.9
-5
7.0
8.5
3.0
8.5
11.0
V
mV/°C
m ?
V GS = 10V, I D = 14A, T J =125°C
10.4
14.0
g FS
Forward Transconductance
V DS = 5V, I D = 14A
58
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 20V, V GS = 0V,
f = 1MHz
f = 1MHz
1970
250
150
1.27
pF
pF
pF
?
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g(TOT)
Q g(TOT)
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge, V GS = 10V
Total Gate Charge, V GS = 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = 20V, I D = 1A
V GS = 10V, R GEN = 6 ?
V DD = 20V, I D = 14A
V GS = 10V
12
12
38
9
37
20
6
7
21
21
61
18
52
28
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
I S
Maximum Continuous Drain-Source Diode Forward Current
(Note 1a)
2.6
A
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = 14 A
(Note 2)
0.8
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 14 A, di/dt = 100A/ μ s
2 2
11
ns
nC
----------------
Notes:
1: R θ JA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R θ JC is guaranteed by design while R θ JA is determined by the user ’s board design.
a. 40°C/W when mounted on a 1 in 2 pad of 2 oz copper
b. 96°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 30 0 μ s, Duty cycle < 2.0%.
3: Starting TJ = 25 o C, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V.
4
FDD8447L Rev.C 3
2
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